tsm 600n25e 250v n-channel power mosfet 1/7 version: a14 to - 251 (ipak) to - 252 (dpak) key parameter performance parameter value unit v ds 250 v r ds(on) (max) 0.6 ? q g 8.4 nc features 100% avalanche tested improved esd performance block diagram n-channel mosfet ordering information part no. package packing TSM600N25Ech c5g to-251 75pcs / tube TSM600N25Ecp rog to-252 2.5kpcs / 13 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds absolute maximum ratings parameter symbol limit unit drain-source voltage v ds 250 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 8 a tc = 100oc 3.6 a pulsed drain current (note 1) i dm 32 a single pulse avalanche energy (note 2) e as 147 mj repetitive avalanche current (note 1) i ar 8 a repetitive avalanche energy (note 1) e ar 5.2 mj power dissipation @ t c = 25 o c p d 52 w peak diode recovery (note 3) dv/dt 4.5 v/ns operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.4 o c/w thermal resistance - junction to ambient r ? ja 110 pin definition : 1. gate 2. drain 3. source
tsm 600n25e 250v n-channel power mosfet 2/7 version: a14 electrical specifications (tc=25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 250 -- -- v drain-source on-state resistance v gs = 10v, i d = 4a r ds(on) -- 0.5 0.6 ? gate threshold voltage v ds = v gs , i d = 250a v gs(th) 3 -- 5 v zero gate voltage drain current v ds = 250v, v gs = 0v i dss -- -- 1 a v ds = 200v, tc = 125oc -- -- 10 gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 a forward transconductance (note 4) v ds = 30v, i d = 4a g fs -- 7.5 -- s dynamic total gate charge (note 4,5) v ds = 200v, i d = 8a, v gs = 10v q g -- 8.4 -- nc gate-source charge (note 4,5) q gs -- 1.9 -- gate-drain charge (note 4,5) q gd -- 4 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 423 -- pf output capacitance c oss -- 74 -- reverse transfer capacitance c rss -- 12 -- switching turn-on delay time (note 4,5) v dd = 125v, i d = 8a, r gen =25 ? t d(on) -- 14 -- ns turn-on rise time (note 4,5) t r -- 25 -- turn-off delay time (note 4,5) t d(off) -- 30 -- turn-off fall time (note 4,5) t f -- 14 -- source-drain diode ratings and characteristic maximum continuous drain-source diode forward current i s -- -- 8 a maximum pulse drain-source diode forward current i sm -- -- 32 a diode-source forward voltage v gs = 0v, i s = 8a v sd -- -- 1.5 v reverse recovery time (note 4) v gs = 0v, i s = 8a di f /dt = 100a/s t rr -- 157 -- ns reverse recovery charge (note 4) q rr -- 0.6 -- c note: 1. pulse width limited by safe operating area 2. l=3.68mh, i as =8a, v dd = 50v, r g = 25 ? , starting t j = 25oc 3. i sd 8a, di/dt 200a/s, v dd bv ds , starting t j =25 4 pulse test: pulse width 300s, duty cycle 2% 5. switching time is essentially independent of ope rating temperature.
tsm 600n25e 250v n-channel power mosfet 3/7 version: a14 electrical characteristics curves output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 600n25e 250v n-channel power mosfet 4/7 version: a14 electrical characteristics curves drain current vs. case temperature bv dss vs. junction temperature v th vs. junction temperature capacitance vs. drain-source voltage maximum safe operating area transient thermal impedance
tsm 600n25e 250v n-channel power mosfet 5/7 version: a14 to-251 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halog en free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 600n25e 250v n-channel power mosfet 6/7 version: a14 to-252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen fr ee product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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